PJ4N3KDW

30V Dual N-Channel MOSFET

Pan Jit International

* RDS(ON), VGS@2.5V,IDS@1mA=7.0Ω

* RDS(ON), VGS@4.0V,IDS@10mA=5.0Ω

* Advanced Trench Process Technology

* High Density Cell Design For Ultra Low On-Resistance

* The MOSFET elements are independent,eliminating interference

* Mounting cost and area can b

PJ4N3KDW

Pan Jit International

126.96 KB

30v dual n-channel mosfet.

📁 Related Datasheet

PJ4054 Thermal Regulation Of The Micro-Linear Battery Management Chip (ETC)

PJ4254FN8C EMI FILTER ARRAY (Pan Jit)

PJ431 (PJ431x) Programmable Precision References (Promax-Johnton)

PJ431A (PJ431x) Programmable Precision References (Promax-Johnton)

PJ431B (PJ431x) Programmable Precision References (Promax-Johnton)

PJ432 (PJ432x) Adjustable Precision Shunt (Promax-Johnton)

PJ432A (PJ432x) Adjustable Precision Shunt (Promax-Johnton)

PJ432B (PJ432x) Adjustable Precision Shunt (Promax-Johnton)

PJ4558 Dual Wide Bandwidth Operational Amplifiers (Promax-Johnton)

PJ4800 30V N-Channel MOSFET (Pan Jit International)

TAGS

PJ4N3KDW 30V Dual N-Channel MOSFET Pan Jit International

Image Gallery