PJ4N3KDW Datasheet - Pan Jit International

PJ4N3KDW 30V Dual N-Channel MOSFET

PJ4N3KDW Features

* RDS(ON), VGS@2.5V,IDS@1mA=7.0Ω

* RDS(ON), VGS@4.0V,IDS@10mA=5.0Ω

* Advanced Trench Process Technology

* High Density Cell Design For Ultra Low On-Resistance

* The MOSFET elements are independent,eliminating interference

* Mounting cost and area can b

Datasheet Details

PJ4N3KDW

Pan Jit International

126.96 KB

30v dual n-channel mosfet.

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