PJS6415AE Datasheet, Mosfet, Pan Jit International

PJS6415AE Features

• Mosfet
• RDS(ON) , VGS@-10V, ID@-4.9A<60mΩ
• RDS(ON) , VGS@-4.5V, ID@-4.2A<70mΩ
• RDS(ON) , VGS@-2.5V, ID@-3.1A<96mΩ
• Advanced Trench Process Technology

PDF File Details

Part number:

PJS6415AE

Manufacturer:

Pan Jit International

File Size:

289.90kb

Download:

📄 Datasheet

Description:

P-channel mosfet.

PJS6415AE Application

• Applications shown on the herein document are examples of standard use and operation. Customers are responsible in comprehending the suitable use in

TAGS

PJS6415AE

Pan Jit International

📁 Related Datasheet

PJS6413 - 20V P-Channel MOSFET (PAN JIT)
PJS6413 20V P-Channel Enhancement Mode MOSFET Voltage -20 V Current -4.4A Features  RDS(ON) , VGS@-4.5V, ID@-4.4A<82mΩ  RDS(ON) , VGS@-2.5V, I.

PJS6414 - 20V N-CHANNEL MOSFET (Pan Jit International)
PPJS6414 20V N-Channel Enhancement Mode MOSFET Voltage 20 V Current 6.6A Features  RDS(ON) , VGS@4.5V, ID@6.6A<36mΩ  RDS(ON) , VGS@2.5V, ID@4.

PJS6416 - 20V N-CHANNEL MOSFET (Pan Jit International)
PPJS6416 20V N-Channel Enhancement Mode MOSFET Voltage 20 V Current 7.4A Features  RDS(ON) , VGS@4.5V, ID@7.4A<27mΩ  RDS(ON) , VGS@2.5V, ID@4.

PJS6400 - N-Channel Enhancement Mode MOSFET (Pan Jit International)
PPJS6400 30V N-Channel Enhancement Mode MOSFET Voltage 30 V Current 6.4A Features  RDS(ON) , VGS@10V, ID@6.4A<37mΩ  RDS(ON) , VGS@4.5V, ID@4..

PJS6401 - P-Channel Enhancement Mode MOSFET (Pan Jit International)
PPJS6401 30V P-Channel Enhancement Mode MOSFET Voltage -30 V Current -4.6A Features  RDS(ON) , VGS@-10V, ID@-4.6A<71mΩ  RDS(ON) , VGS@-4.5V, I.

PJS6404 - N-Channel Enhancement Mode MOSFET (Pan Jit International)
PPJS6404 30V N-Channel Enhancement Mode MOSFET Voltage 30 V Current 6.8A Features  RDS(ON) , VGS@10V, ID@6.8A<32mΩ  RDS(ON) , VGS@4.5V,ID@4.3A<.

PJS6405 - P-Channel Enhancement Mode MOSFET (Pan Jit International)
PPJS6405 30V P-Channel Enhancement Mode MOSFET Voltage -30 V Current -4.6A Features  RDS(ON) , VGS@-10V, ID@-4.6A<72mΩ  RDS(ON) , VGS@-4.5V, I.

PJS6600 - Complementary Enhancement Mode MOSFET (Pan Jit International)
PPJS6600 30V Complementary Enhancement Mode MOSFET – ESD Protected Voltage 30 / -30V Current 1.6 /-1.1A SOT-23 6L Features  Advanced Trench Proc.

PJS6601 - Complementary Enhancement Mode MOSFET (Pan Jit International)
PPJS6601 20V Complementary Enhancement Mode MOSFET Voltage 20 / -20V Current 4.1 /-3.1A SOT-23 6L Features  Advanced Trench Process Technology .

PJS6602 - Complementary Enhancement Mode MOSFET (Pan Jit International)
PPJS6602 20V Complementary Enhancement Mode MOSFET Voltage 20 / -20V Current 5.2 /-3.4A SOT-23 6L Features  Advanced Trench Process Technology .