PJT7838 Datasheet, mosfet equivalent, Pan Jit International

PJT7838 Features

• Mosfet
• RDS(ON) , VGS@10V, ID@500mA<1.45Ω
• RDS(ON) , VGS@4.5V, ID@200mA<1.95Ω
• RDS(ON) , VGS@2.5V, ID@100mA<4.0Ω
• RDS(ON) , VGS@1.8V, ID@10mA<4.0Ω(typ.)

PDF File Details

Part number:

PJT7838

Manufacturer:

Pan Jit International

File Size:

270.82kb

Download:

📄 Datasheet

Description:

50v n-channel mosfet.

PJT7838 Application

• Applications shown on the herein document are examples of standard use and operation. Customers are responsible in comprehending the suitable use in

TAGS

PJT7838

Pan Jit International

📁 Related Datasheet

PJT7839 - P-Channel Enhancement Mode MOSFET (Pan Jit International)
PPJT7839 60V P-Channel Enhancement Mode MOSFET Voltage -60 V Current -250mA Features  RDS(ON) , VGS@-10V, ID@-500mA<4Ω  RDS(ON) , VGS@-4.5V, ID.

PJT7801 - 20V P-Channel MOSFET (PAN JIT)
PPJT7801 20V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -20 V Current -0.7A SOT-363 Features  RDS(ON) , VGS@-4.5V, ID@-0.7A<325.

PJT7802 - 20V N-CHANNEL MOSFET (Pan Jit International)
PPJT7802 20V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 20 V Current 0.5A SOT-363 Features  RDS(ON) , VGS@4.5V, ID@0.5A<0.4Ω .

PJT7807 - 20V P-CHANNEL MOSFET (Pan Jit International)
PPJT7807 20V P-Channel Enhancement Mode MOSFET Voltage -20 V Current -500mA Features  Low Voltage Drive (1.2V).  Advanced Trench Process Techno.

PJT7812 - 30V N-Channel MOSFET (Pan Jit International)
PPJT7812 30V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 30 V Current 500mA SOT-363 Features  RDS(ON) , VGS@4.5V, ID@500mA<1.2Ω .

PJT7872B - 60V N-Channel MOSFET (Pan Jit International)
PPJT7872B 60V N-Channel Enhancement Mode MOSFET Voltage 60 V Current 250mA Features  RDS(ON) , VGS@10V, ID@600mA<3Ω  RDS(ON) , VGS@4.5V, ID@20.

PJT7413 - 20V P-CHANNEL MOSFET (Pan Jit International)
PPJT7413 20V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -20 V Current -2.5A SOT-363-1 Features  RDS(ON) , VGS@-4.5V, ID@-2.5A<8.

PJT7600 - Complementary Enhancement Mode MOSFET (Pan Jit International)
PPJT7600 20V Complementary Enhancement Mode MOSFET – ESD Protected Voltage 20 / -20V Current 1 / -0.7A SOT-363 Features Application  Advanced Tr.

PJT7603 - Complementary Enhancement Mode MOSFET (Pan Jit International)
PPJT7603 Complementary Enhancement Mode MOSFET – ESD Protected Voltage 50 / -60V Current 0.4A / -0.25A SOT-363 Features  Advanced Trench Process.

PJT138L - 60V N-Channel MOSFET (Pan Jit International)
PPJT138L 60V N-Channel Enhancement Mode MOSFET Voltage 60 V Current 200mA Features  RDS(ON) , VGS@10V, ID@200mA<4.2Ω  RDS(ON) , VGS@4.5V, ID@1.