RB501V-40TW
Pan Jit International
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Surface mount schottky diodes.
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RB501V-40 - SCHOTTKY BARRIER DIODE
(JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
RB501V -40 Schottky Barrier Diode
FEATURES z Low current rectif.
RB501V-40 - Schottky barrier diode
(Rohm)
Schottky Barrier Diode
RB501V-40
lApplication Low current rectification
lDimensions (Unit : mm)
1.25±0.1
0.1±0.1 0.05
Datasheet lLand size figu.
RB501V-40 - Schottky Barrier Diode
(GME)
Production specification
Schottky Barrier Diode
FEATURES
High current rectifier schottky diode Low voltage; Low inductance For power supply
Pb.
RB501V-40 - SURFACE MOUNT SCHOTTKY BARRIER DIODE
(LITE-ON)
SURFACE MOUNT SCHOTTKY BARRIER DIODE
RB501V-40
REVERSE VOLTAGE – 40 Volts FORWARD CURRENT – 0.1 Ampere
FEATURES
• Extremely low VF drop • Very Small.
RB501V-40 - SURFACE MOUNT SCHOTTKY BARRIER DIODE
(WON-TOP)
® WON-TOP ELECTRONICS
RB501V-40
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Pb
Features
Low Turn-On Voltage
Fast Switching Speed PN Junction Guard Ri.
RB501V-40 - SURFACE MOUNT SCHOTTKY DIODES
(TIPTEK)
SURFACE MOUNT SCHOTTKY DIODES
FEATURES
LOW CURRENT RECTIFICTAION SMALL SURFACE MOUNTING TYPE. HIGHT RELIABILITY. PB-FREE PACKAGE IS AVAILABLE..
RB501V-40 - Silicon Epitaxial Planar Schottky Barrier Diode
(JGD)
Features
* Small surface mounting type * High reliability * Low current rectification * Marking Code: S7
RB501V-40
Silicon Epitaxial Planar Schottk.
RB501V-40 - SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
(SEMTECH ELECTRONICS)
RB501V-40
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Features • Small surface mounting type • High reliability
PINNING PIN 1 2 DESCRIPTION Cath.
RB501V-40 - Schottky barrier diode
(Guangdong Kexin)
SMD Type
Schottky barrier diode RB501V-40
Diodes
SOD-323
+0.1 1.7-0.1
Unit: mm
Small surface mounting type.(UMD2) Low VF.(VF = 0.43V Typ.at 100mA).
RB501V-40 - Schottky Barrier Diode
(Tak Cheong Electronics)
TAK CHEONG
®
SEMICONDUCTOR
200mW SOD-323 SURFACE MOUNT
Absolute Maximum Ratings
Symbol PD TSTG TJ VRM VR IF(AV) IFSM Power Dissipation
TA = 25°C u.
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