PJUSB208DW Datasheet, Array, Pan Jit

PJUSB208DW Features

• Array
• Low leakage current, maximum of 0.1  A at rated voltage
• Protect four I/O lines
• Flammability rating UL94V-0
• Lead f ree in comply with EU RoHS 201

PDF File Details

Part number:

PJUSB208DW

Manufacturer:

Pan Jit

File Size:

319.95kb

Download:

📄 Datasheet

Description:

Low capacitance diode array.

PJUSB208DW Application

• Applications
• USB 2.0 and Firewire Port Protection
• LAN / W LAN Access Point terminals
• Video Signal Line Protection http

TAGS

📁 Related Datasheet

PJUSB208 - Low Capacitance Diode Array (Pan Jit)
PJUSB208 Low Capacitance Diode Array This diode array is configured to protect up to four data transmission lines acting as a line terminator, minimiz.

PJUSB208 - Low Capacitance Diode Array (Pan Jit)
PJUSB208-PJUSB208R Low Capacitance Diode Array This diode array is configured to protect up to four data transmission lines acting as a line terminato.

PJUSB208R - Low Capacitance Diode Array (Pan Jit)
PJUSB208-PJUSB208R Low Capacitance Diode Array This diode array is configured to protect up to four data transmission lines acting as a line terminato.

PJUSB05-4 - MOSFET (Pan Jit)
PJUSB05-4 FEATURES • SOT23-6L package allows five separate unidirectional configurations • Low leakage < 1 µ A@5V • Breakdown voltage : 6.37V-7.04V@1m.

PJUSBLC6-2 - Low Capacitance TVS and Diode Array (Pan Jit)
PJUSBLC6-2 Low Capacitance TVS and Diode Array This diode array is configured to protect up to two data transmission lines acting as a line terminator.

PJU14P06A - 60V P-Channel Enhancement Mode MOSFET (Pan Jit International)
PPJU14P06A / PJD14P06A 60V P-Channel Enhancement Mode MOSFET Voltage -60 V Current -14 A Features  RDS(ON), VGS@-10V,ID@-6A<110mΩ  RDS(ON), VG.

PJU1N60 - 600V N-Channel MOSFET (Pan Jit)
PJU1N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 1A, 600V, RDS(ON)=11Ω@VGS=10V, ID=0.5A • • • • • • Low ON Resistance Fast Switching Low Gate.

PJU1N80 - 800V N-Channel Enhancement Mode MOSFET (Pan Jit International)
PJP1N80 / PJU1N80 800V N-Channel Enhancement Mode MOSFET FEATURES • 1A, 800V, RDS(ON)=16Ω@VGS=10V, ID=0.5A • • • • • • Low ON Resistance Fast Switchin.

PJU1NA50 - 500V N-Channel MOSFET (Pan Jit International)
PPJN1NA50 / PJW1NA50 / PJU1NA50 / PJD1NA50 500V N-Channel MOSFET Voltage 500 V Current 1A Features  RDS(ON), VGS@10V,ID@0.5A<9Ω  High switching.

PJU1NA60A - 600V N-Channel MOSFET (Pan Jit International)
PPJN1NA60A / PJW1NA60A / PJU1NA60A / PJD1NA60A 600V N-Channel MOSFET Voltage 600 V Current 1A Features  RDS(ON), VGS@10V,ID@0.5A<7.9Ω  High swi.