* q High transition frequency fT. 13.5±0.5 / s Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit e e) Collector to base voltage VCBO 30 V c e. d typ Collector to emitter voltage VCEO 20 V n d stag tinue Emitter to base voltage VEBO 2.3±0.2 3 V le on Collector current
2SC1215
Panasonic Semiconductor
227.64 KB
Silicon npn transistor.
Transistor
2SC1215
Silicon NPN epitaxial planer type
For high-frequency (VHF band) amplification and oscillation
5.0±0.2
Unit: mm 4.0±0.2
5.1±0.2
.
📁 Related Datasheet
2SC1212 - Silicon NPN Transistor
(Hitachi Semiconductor)
2SC1212, 2SC1212A
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
TO-126 MOD
1
1. Emitter 2. Collector 3. Base
2
3
Abso.
2SC1212 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Current IC= 1A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min) ·Good Linearit.
2SC1212 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors ..
2SC1212 2SC1212A
DESCRIPTION ·With TO-126 package ·.
2SC1212A - Silicon NPN Transistor
(Hitachi Semiconductor)
2SC1212, 2SC1212A
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
TO-126 MOD
1
1. Emitter 2. Collector 3. Base
2
3
Abso.
2SC1212A - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors ..
2SC1212 2SC1212A
DESCRIPTION ·With TO-126 package ·.
2SC1212A - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Current -IC= 1A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Good Lineari.
2SC1213 - Silicon NPN Transistor
(Hitachi Semiconductor)
2SC1213, 2SC1213A
Silicon NPN Epitaxial
Application
• Low frequency amplifier • Complementary pair with 2SA673 and 2SA673A
Outline
TO-92 (1)
1. Emi.
2SC1213 - SILICON NPN TRANSISTOR
(LZG)
2SC1213(3DG1213) 2SC1213A(3DG1213A)
NPN /SILICON NPN TRANSISTOR
:/Purpose: Low frequency amplifier applications . : 2SA673(3CG673)/2SA673A(3CG673A).
