* 0.4 0.8±0.1 0.4 +0.1 Unit µA µA V V 15 10 50 5 150 6 0.7 11 14 15 2 1.2 300 GHz pF dB dB dB Pulse measurement 1 Transistor PC
* Ta 150 24 Ta=25˚C 125 20 IB=200µA 100 2SC4808 IC
* VCE 120 VCE=8V IC
* VBE Collector power dissipation PC (mW) Collector current IC (mA
2SC4808
Panasonic Semiconductor
37.55 KB
Npn transistor.
Transistor
2SC4808
Silicon NPN epitaxial planer type
For UHF band low-noise amplification
Unit: mm
1.6±0.15
1.6±0.1
q q q
1.0±0.1
0.5
q
Low noi.
📁 Related Datasheet
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2SC4801 - (2SC4800 - 2SC4803) Power Bipolar Transistors
(ETC)
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2SC4802 - (2SC4800 - 2SC4803) Power Bipolar Transistors
(ETC)
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2SC4803 - (2SC4800 - 2SC4803) Power Bipolar Transistors
(ETC)
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2SC4804 - SILICON POWER TRANSISTOR
(SavantIC)
..
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4804
DESCRIPTION ·With ITO-220 package ·High br.
2SC4805 - NPN Transistor
(Panasonic Semiconductor)
Transistors
2SC4805
Silicon NPN epitaxial planar type
For 2 GHz band low-noise amplification
Unit: mm
(0.425)
0.3+–00..01
■ Features 3
• High tran.
2SC4805G - Silicon NPN Transistor
(Panasonic)
Transistors
This product plies with the RoHS Directive (EU 2002/95/EC).
2SC4805G
Silicon NPN epitaxial planar type
For 2 GHz band low-noise amp.
2SC4806 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1700V(Min) ·High Switching Speed ·Low Saturation Voltage ·100% avalanch.
