* High breakdown voltage, and high reliability through the use of a glass passivation layer
* High-speed switching
* Wide area of safe operation (ASO) 26.0±0.5 (3.0) (1.5) (1.5) 2.0±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 10.9±0.5 (1.5) 2.7±0.3 I Absolute Maximum Ratings TC
2SC5584
Panasonic Semiconductor
45.88 KB
Npn transistor.
Power Transistors
2SC5584
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output
(10.0) (6.0) (2.0) (4.0)
20.0±0.5 φ 3.3±.
📁 Related Datasheet
2SC5580 - NPN TRANSISTOR
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2SC5580
Silicon NPN epitaxial planer type
Unit: mm
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2SC5583 - NPN TRANSISTOR
(Panasonic Semiconductor)
Power Transistors
2SC5583
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output
(10.0) (6.0) (2.0) (4.0)
20.0±0.5 φ 3.3±.
2SC5584 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
isc Product Specification
2SC5584
DESCRIPTION ·Silicon NPN triple diffusion mesa type ·High Switching Speed ·High B.
2SC5585 - LOW FREQUENCY TRANSISTOR
(GME)
Production specification
LOW FREQUENCY TRANSISTOR
FEATURES
High current. Low VCE(sat).
Pb
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2SC5585
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2SC5585 - NPN TRANSISTOR
(Rohm)
2SC5663 / 2SC5585
Low frequency transistor (12V, 500mA)
Datasheet
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VCEO IC
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lFeatures 1)High current 2)Low VCE(sat). VCE(.
2SC5585 - Low Frequency Transistor
(Kexin)
SMD Type
Low Frequency Transistor 2SC5585
Transistors
SOT-523
+0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05
Unit: mm
+0.01 0.1-0.01
2
1
+0.15 1.6-0.1.
2SC5585 - NPN Transistor
(SeCoS)
2SC5585
Elektronische Bauelemente
RoHS Compliant Product
NPN Silicon General Purpose Transistor
FEATURES
High Current Low VCE(sat) - VCE(sat)İ 250mV.
2SC5585 - NPN TRANSISTOR
(Weitron)
2SC5585
NPN TRANSISTOR
P b Lead(Pb)-Free
1 2 3
FEATURES: * High current. * Low VCE(sat). VCE(sat).250mV at IC = 200mA / IB = 10mA
SOT-523(SC-75)
MA.
