2SC6012 Silicon NPN triple diffusion Power Transistor

Panasonic Semiconductor

Description

Power Transistors 2SC6012 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 (10.0) Unit: mm φ 3.2±0.1 5˚ (4.5) 3.0±0.

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Datasheet Specifications

Part number: 2SC6012
Manufacturer: Panasonic Semiconductor
File Size: 89.03 KB
Datasheet: 2SC6012_PanasonicSemiconductor.pdf
Description: Silicon NPN triple diffusion Power Transistor

Features

* High breakdown voltage, and high reliability through the use of a glass passivation layer
* High-speed switching
* Wide safe oeration area 26.5±0.5 (23.4) (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5.5±0.3 5˚ 5˚
* Absolute Maximum Ratings TC = 25°C Pa

Applications

* or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications:
* Special applications (such as for airplanes, aerospace, automobiles, traff

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2SC6012 Silicon NPN triple diffusion Power Transistor Panasonic Semiconductor

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