2SC6012 - Silicon NPN triple diffusion Power Transistor
2SC6012 Features
* High breakdown voltage, and high reliability through the use of a glass passivation layer
* High-speed switching
* Wide safe oeration area 26.5±0.5 (23.4) (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5.5±0.3 5˚ 5˚
* Absolute Maximum Ratings TC = 25°C Pa
