• Part: 2SC6012
  • Description: Silicon NPN triple diffusion Power Transistor
  • Category: Transistor
  • Manufacturer: Panasonic
  • Size: 89.03 KB
Download 2SC6012 Datasheet PDF
Panasonic
2SC6012
Features - High breakdown voltage, and high reliability through the use of a glass passivation layer - High-speed switching - Wide safe oeration area 26.5±0.5 (23.4) (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5.5±0.3 5˚ 5˚ - Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Emitter-base voltage (Collector open) Base current Collector current Peak collector current - Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCES VEBO IB IC ICP PC Rating 1 700 1 700 7 3 15 24 60 3 150 - 55 to +150 °C °C Unit V V V A A A W 3.3±0.3 18.6±0.5 (2.0) Solder Dip 5˚ (2.0) 1: Base 2: Collector 3: Emitter EIAJ: SC-94 TOP-3E-A1 Package Internal Connection Note) - : Non-repetitive peak collector current - Electrical Characteristics TC = 25°C ± 3°C Parameter Emitter-base voltage (Collector open) Forward voltage - Collector-base cutoff current (Emitter...