* High breakdown voltage, and high reliability through the use of a glass passivation layer
* High-speed switching
* Wide safe oeration area 26.5±0.5 (23.4) (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5.5±0.3 5˚ 5˚
* Absolute Maximum Ratings TC = 25°C Pa
2SC6012
Panasonic Semiconductor
89.03 KB
Silicon npn triple diffusion power transistor.
Power Transistors 2SC6012 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 (10.0) Unit: mm φ 3.2±0.1 5˚ (4.5) 3.0±0.
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