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2SC6012

Silicon NPN triple diffusion Power Transistor

2SC6012 Features

* High breakdown voltage, and high reliability through the use of a glass passivation layer

* High-speed switching

* Wide safe oeration area 26.5±0.5 (23.4) (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5.5±0.3 5˚ 5˚

* Absolute Maximum Ratings TC = 25°C Pa

2SC6012 Datasheet (89.03 KB)

Preview of 2SC6012 PDF

Datasheet Details

Part number:

2SC6012

Manufacturer:

Panasonic Semiconductor

File Size:

89.03 KB

Description:

Silicon npn triple diffusion power transistor.
Power Transistors 2SC6012 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 (10.0) Unit: mm φ 3.2±0.1 5˚ (4.5) 3.0±0.

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2SC6012 Silicon NPN triple diffusion Power Transistor Panasonic Semiconductor

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