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2SD1273A - Silicon NPN Transistor

Datasheet Summary

Features

  • q q q High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 80 100 60 80 6 6 3 1 40 2 150.
  • 55 to +150 Unit V 7.5±0.2 16.7±0.3 φ3.1±0.1 4.0 14.0±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1273 2SD1273A 2SD1273 Symbol VCBO VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg 1.4±0.1 1.3±0.2 Solder Dip 0.8±0.1 0.5 +0.2.

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Datasheet Details

Part number 2SD1273A
Manufacturer Panasonic Semiconductor
File Size 46.20 KB
Description Silicon NPN Transistor
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Power Transistors 2SD1273, 2SD1273A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Complementary to 2SB1299 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 4.2±0.2 s Features q q q High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 80 100 60 80 6 6 3 1 40 2 150 –55 to +150 Unit V 7.5±0.2 16.7±0.3 φ3.1±0.1 4.0 14.0±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1273 2SD1273A 2SD1273 Symbol VCBO VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg 1.4±0.1 1.3±0.2 Solder Dip 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.
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