* q q q High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 80 100 60 80 6 6 3 1 40 2 150
* 55 to +150 Unit V 7.5±0.2 16.7±0.3 φ3.1±0.1 4.0 14.0±0.5 s
2SD1273A
Panasonic Semiconductor
46.20 KB
Silicon npn transistor.
Power Transistors
2SD1273, 2SD1273A
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio Complem.
📁 Related Datasheet
2SD1273 - Silicon NPN Transistor
(Panasonic Semiconductor)
Power Transistors
2SD1273, 2SD1273A
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio Complem.
2SD1273 - Silicon NPN transistor
(BLUE ROCKET ELECTRONICS)
2SD1273(A)
Rev.F Mar.-2016
DATA SHEET
/ Descriptions TO-220F NPN 。Silicon NPN transistor in a TO-220F Plastic Package.
/ Features
hFE 、。 Hig.
2SD1273A - Silicon NPN transistor
(BLUE ROCKET ELECTRONICS)
2SD1273(A)
Rev.F Mar.-2016
DATA SHEET
/ Descriptions TO-220F NPN 。Silicon NPN transistor in a TO-220F Plastic Package.
/ Features
hFE 、。 Hig.
2SD1270 - Silicon NPN Transistor
(Panasonic Semiconductor)
Power Transistors
2SD1270
Silicon NPN epitaxial planar type
For power switching Complementary to 2SB945
0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2
Uni.
2SD1270 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
2SD1270
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@ IC= 4A ·Collector-Emitter Breakdown Vo.
2SD1270 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1270
..
DESCRIPTION ·With TO-220Fa package ·Low co.
2SD1271 - Silicon PNP Transistor
(Panasonic Semiconductor)
Power Transistors
2SD1271, 2SD1271A
Silicon NPN epitaxial planar type
For power switching Complementary to 2SB946 and 2SB946A
Unit: mm
0.7±0.1 10.0±0.
2SD1271 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
2SD1271
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@ IC= 5A ·Collector-Emitter Breakdown Vo.
