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2SD1302 - Silicon NPN Transistor

Datasheet Summary

Features

  • q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings 25 20 12 1 0.5 600 150.
  • 55 ~ +150 Unit V V 2.3±0.2 0.45.
  • 0.1 1.27 +0.2 13.5±0.5 Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer rati.

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Datasheet Details

Part number 2SD1302
Manufacturer Panasonic Semiconductor
File Size 41.26 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD1302 Datasheet
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Transistor 2SD1302 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter Unit: mm 5.0±0.2 4.0±0.2 s Features q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings 25 20 12 1 0.5 600 150 –55 ~ +150 Unit V V 2.3±0.2 0.45 –0.1 1.27 +0.2 13.5±0.5 Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. 5.1±0.2 0.45 –0.1 1.27 +0.2 V A A mW ˚C ˚C 1 2 3 2.54±0.
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