B621 Datasheet - Panasonic Semiconductor

B621 2SB621

Transistor 2SB621, 2SB621A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD592 and 2SD592A 5.0±0.2 Unit: mm 4.0±0.2 q q Low collector to emitter saturation voltage VCE(sat). High transition frequency fT. (Ta=25˚C) Ratings 30 60 25 50 5 1.5 1 750 150 55 ~ +150 Unit V s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB621 2SB621A 2SB621 VCBO VCEO VEB.

B621 Features

* 0.45

* 0.1 +0.2 0.45

* 0.1 1.27 +0.2 emitter voltage 2SB621A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V A A mW ˚C ˚C 1.27 1 2 3 2.3±0.2 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC

B621_PanasonicSemiconductor.pdf