Part number:
C2632
Manufacturer:
Panasonic Semiconductor
File Size:
208.54kb
Download:
Description:
2sc2632.
PDF File Details
C2632
Panasonic Semiconductor
208.54kb
2sc2632.
📁 Related Datasheet
C2630 - 2SC2630
(Mitsubishi Electric Semiconductor)
..
..
..
.
C2631 - Silicon NPN Transistor
(Panasonic)
Transistors
2SC2631
Silicon NPN epitaxial planar type
For low-frequency high breakdown voltage amplification Complementary to 2SA1123
5.0±0.2
Unit:.
C2633 - 2SC2633
(Panasonic)
..
..
.
C2634 - 2SC2634
(Panasonic Semiconductor)
Transistors
2SC2634
Silicon NPN epitaxial planar type
For low-frequency and low-noise amplification Complementary to 2SA1127
5.0±0.2
Unit: mm 4.0±0.
C2636 - Silicon NPN Transistor
(Panasonic)
Transistors
2SC2636
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation
Unit: mm
■ Features
(0.4)
6.9±0.1 (1.5)
(1.5)
.
C2610 - 2SC2610
(Renesas)
2SC2610
Silicon NPN Triple Diffused
Application
• High voltage amplifier • TV Video output
Outline
RENESAS Package code: PRSS0003DC-A (Package name: T.
C2611 - 2SC2611
(Hitachi Semiconductor)
2SC2611
..
Silicon NPN Triple Diffused
Application
High voltage amplifier TV VIDEO output
Outline
TO-126 MOD
1
1. Emitter 2. Col.
C2611 - TRANSISTOR
(Jiangsu Changjiang Electronics)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
..
TO-92 Plastic-Encapsulate Transistors
TO¡ª 92
C2611
FEATURES Power dissipatio.
C2611 - Plastic-Encapsulated Transistors
(TRANSYS Electronics)
Transys
Electronics
L I M I T E D
..
TO-251 Plastic-Encapsulated Transistors
C 2611
FEATURES Power dissipation PCM: 1 W (Tamb=25℃)
.
C2612 - 2SC2612
(Hitachi Semiconductor)
2SC2612
Silicon NPN Triple Diffused
Application
High voltage, high speed and high power switching
Outline
TO-220AB
1 23
Absolute Maximum Ratings (T.
Stock and price
TAGS
