C5884
Features
9.9±0.3
4.6±0.2 2.9±0.2
15.0±0.3 8.0±0.2 1.0±0.1
- High breakdown voltage: VCBO ≥ 1 500 V
- Wide safe operation area
φ3.2±0.1
- Built-in dumper diode
- Absolute Maximum Ratings TC = 25°C
/ Parameter
Symbol Rating
Unit
13.7-+00..25 2.0±0.2 4.1±0.2
Solder Dip
0.76±0.06 1.45±0.15
1.2±0.15
0.75±0.1
1.25±0.1 2.6±0.1
0.7±0.1 e Collector-base voltage (Emitter open) VCBO
1 500
V pe) Collector-emitter voltage (E-B short) VCES
1 500
V nc d ge. ed ty Emitter-base voltage (Collector open) VEBO
V sta tinu Base current
A a e cycle iscon Collector current
A life d, d Peak collector current
- ICP
A n u duct type Collector power dissipation
W te tin Pro ed Ta=25°C
2 four ntinu Junction temperature
Tj
°C ing isco Storage temperature
Tstg
- 55 to +150 °C ain oncludes fpoell,opwlaned d...
