Datasheet4U Logo Datasheet4U.com

D1893 - 2SD1893

Features

  • q Optimum for 40W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat):.

📥 Download Datasheet

Datasheet preview – D1893

Datasheet Details

Part number D1893
Manufacturer Panasonic
File Size 52.58 KB
Description 2SD1893
Datasheet download datasheet D1893 Datasheet
Additional preview pages of the D1893 datasheet.

📁 Similar Datasheet

  • D1897 - 2SD1897 (D1897)
  • D1899 - 2SD1899 (NEC)
  • D1800N - Rectifier Diode (Infineon)
  • D1801 - 2SD1801 (Sanyo Semiconductor Corporation)
  • D1802 - 2SD1802 (Sanyo Semiconductor Corporation)
  • D1803 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • D1804 - 2SD1804 (Sanyo Semicon Device)
  • D1805 - 2SD1805 (Sanyo Semicon Device)
  • D1806 - 2SD1806 (Sanyo Semicon Device)
  • D180SC4M - Schottky Barrier Diodes (Shindengen)
Other Datasheets by Panasonic Semiconductor
  • D1890 - Silicon NPN Transistor

Full PDF Text Transcription

Click to expand full text
Power Transistors 2SD1893 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1253 s Features q Optimum for 40W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): <2.5V q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature VCBO VCEO VEBO ICP IC PC Tj Tstg 130 110 5 10 6 50 3 150 –55 to +150 Unit V V V A A W ˚C ˚C 12.5 3.5 15.0±0.2 0.7 15.0±0.3 11.0±0.2 φ3.2±0.
Published: |