Datasheet Specifications
- Part number
- LN51F
- Manufacturer
- Panasonic Semiconductor
- File Size
- 45.51 KB
- Datasheet
- LN51F_PanasonicSemiconductor.pdf
- Description
- GaAs Infrared Light Emitting Diodes
Description
Infrared Light Emitting Diodes LN51F, LN51L GaAs Infrared Light Emitting Diodes For optical control systems LN51F ø4.6±0.15 Unit : mm Glass window .
Features
* High-power output, high-efficiency : PO = 6 mW (typ. ) Fast response : tr, tf = 1 µs (typ. ) Infrared light emission close to monochromatic light : λP =950 nm (typ. ) Narrow directivity, suitable for effective use of optical output : θ = 8 deg. (LN51L) Wide directivity, matched for external optical sysLN51F Distributors
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