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LN52 GaAs Infrared Light Emitting Diode

LN52 Description

Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems .

LN52 Features

* High-power output, high-efficiency : PO = 6 mW (typ. ) Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm Optimum for mesuring instruments and control equipments in conbination with silicon photodetectors ø5.35 +0.2

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Datasheet Details

Part number
LN52
Manufacturer
Panasonic Semiconductor
File Size
44.78 KB
Datasheet
LN52_PanasonicSemiconductor.pdf
Description
GaAs Infrared Light Emitting Diode

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GaAs Infrared Light Emitting Diode Panasonic Semiconductor
Panasonic Semiconductor LN52-like datasheet