Part number:
LN52
Manufacturer:
Panasonic Semiconductor
File Size:
44.78 KB
Description:
Gaas infrared light emitting diode.
* High-power output, high-efficiency : PO = 6 mW (typ.) Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm Optimum for mesuring instruments and control equipments in conbination with silicon photodetectors ø5.35 +0.2
LN52
Panasonic Semiconductor
44.78 KB
Gaas infrared light emitting diode.
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