Datasheet Specifications
- Part number
- LN52
- Manufacturer
- Panasonic Semiconductor
- File Size
- 44.78 KB
- Datasheet
- LN52_PanasonicSemiconductor.pdf
- Description
- GaAs Infrared Light Emitting Diode
Description
Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems .
Features
* High-power output, high-efficiency : PO = 6 mW (typ. ) Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm Optimum for mesuring instruments and control equipments in conbination with silicon photodetectors ø5.35 +0.2LN52 Distributors
📁 Related Datasheet
📌 All Tags