LN54 GaAs Infrared Light Emitting Diode

Panasonic Semiconductor

Description

Infrared Light Emitting Diodes LN54 GaAs Infrared Light Emitting Diode Unit : mm Not soldered 0.8 max.For optical control systems ø2.2 3.9±0.3 2.4 .

📥 Download Datasheet

LN54 Datasheet Preview — Preview of LN54 PDF

Datasheet Specifications

Part number: LN54
Manufacturer: Panasonic Semiconductor
File Size: 44.28 KB
Datasheet: LN54_PanasonicSemiconductor.pdf
Description: GaAs Infrared Light Emitting Diode

Features

* High-power output, high-efficiency : PO = 4.6 mW (typ. ) Emitted light spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ. ) Small size, thin side-view type package 2.9±0.25 1.2 1.7±0.2 0.9 0.8 12.8 min. 2.8 2-1.2±0.3 2-0.45±0.15 0.45

LN54 Distributors

📁 Related Datasheet

LN5001 LN5012 LN5024 LN5026 LN5030 LN5033

📌 All Tags

LN54 GaAs Infrared Light Emitting Diode Panasonic Semiconductor

Panasonic Semiconductor LN54-like datasheet