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LN54 - GaAs Infrared Light Emitting Diode

LN54 Description

Infrared Light Emitting Diodes LN54 GaAs Infrared Light Emitting Diode Unit : mm Not soldered 0.8 max.For optical control systems ø2.2 3.9±0.3 2.4 .

LN54 Features

* High-power output, high-efficiency : PO = 4.6 mW (typ. ) Emitted light spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ. ) Small size, thin side-view type package 2.9±0.25 1.2 1.7±0.2 0.9 0.8 12.8 min. 2.8 2-1.2±0.3 2-0.45±0.15 0.45

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Datasheet Details

Part number
LN54
Manufacturer
Panasonic Semiconductor
File Size
44.28 KB
Datasheet
LN54_PanasonicSemiconductor.pdf
Description
GaAs Infrared Light Emitting Diode

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GaAs Infrared Light Emitting Diode Panasonic Semiconductor
Panasonic Semiconductor LN54-like datasheet