* High-power output, high-efficiency : PO = 4.6 mW (typ.) Emitted light spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ.) Small size, thin side-view type package 2.9±0.25 1.2 1.7±0.2 0.9 0.8 12.8 min. 2.8 2-1.2±0.3 2-0.45±0.15 0.45
LN54
Panasonic Semiconductor
44.28 KB
Gaas infrared light emitting diode.
Infrared Light Emitting Diodes LN54 GaAs Infrared Light Emitting Diode Unit : mm Not soldered 0.8 max. For optical control systems ø2.2 3.9±0.3 2.4 .
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