LN54 - GaAs Infrared Light Emitting Diode

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Panasonic Semiconductor

Part number	LN54
Manufacturer	Panasonic Semiconductor
File Size	44.28 KB
Description	GaAs Infrared Light Emitting Diode
Datasheet	LN54 Datasheet
Additional preview pages of the LN54 datasheet.

High-power output, high-efficiency : PO = 4.6 mW (typ. ) Emitted light spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ. ) Small size, thin side-view type package 2.9±0.25 1.2 1.7±0.2 0.9 0.8 12.8 min. 2.8 2-1.2±0.3 2-0.45±0.15 0.45±0.15 2.54 R0.8 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature.

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Published: Mar 22, 2005 |