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LNC802PS GaAlAs Semiconductor Laser

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Description

Semiconductor Laser LNC802PS GaAlAs Semiconductor Laser ø5.6 +0 *0.025 ø4.3±0.1 ø3.55±0.1 ø1.0 min.Y 0.4±0.1 110˚±1˚ Unit : mm 2 .

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Datasheet Specifications

Part number
LNC802PS
Manufacturer
Panasonic Semiconductor
File Size
40.60 KB
Datasheet
LNC802PS_PanasonicSemiconductor.pdf
Description
GaAlAs Semiconductor Laser

Features

* Low threshold current Stable single horizontal mode oscillation Long lifetime, high reliability High radiant power : 50mW X LD 3 PD 1 Junction plane 1.0±0.1 2.3±0.2 1.27 0.25 Z Reference slot Kovar glass LD pellet Reference plane ø1.2 max. 3-ø0.45 2 Optical disk memory Medical equipment 6.5±

Applications

* 1.2±0.1 1 ø2.0 3 1: LD Anode 2: Common Case 3: PD Cathode Bottom view Absolute Maximum Ratings (Ta = 25˚C) Parameter Radiant power Reverse voltage Power dissipation Operating ambient temperature Storage temperature Laser PIN Symbol PO VR VR (PIN) Pd (PIN) Topr Tstg Ratings 50 1.5 30 100

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