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MIP501 Silicon MOS IC

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Description

Intelligent Power Devices (IPDs) MIP501, MIP502 MIP501 , MIP502 Silicon MOS IC s .
No.

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Datasheet Specifications

Part number
MIP501
Manufacturer
Panasonic Semiconductor
File Size
38.70 KB
Datasheet
MIP501-PanasonicSemiconductor.pdf
Description
Silicon MOS IC

Features

* q MIP501 3.8±0.2 10.8±0.2 7.5±0.2 4.5±0.2 Unit : mm High breakdown voltage, N-Ch MOS FET output (V DSS > 40V Ron < 0.5 Ω) Over-current-protection function built-in Reset function built-in 16.0±1.0 90° 0.65±0.1 0.85±0.1 q q q 2.5±0.1 1.0±0.1 0.65±0.1 0.7±0.1 0.8C 0.8C Direct drive possibl

Applications

* q Lamp drive 2.5±0.2 0.8C 0.5±0.1 2.5±0.2 0.4±0.1 2.05±0.2 s Absolute Maximum Ratings (Ta= 25˚C) Parameter Output breakdown voltage Output peak current Output current Input voltage Input current Allowable power dissipation Junction temperature Storage temperature Operating temperature MIP501 MIP

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