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PN108 - (PN107) Silicon NPN Phototransistors

This page provides the datasheet information for the PN108, a member of the PN107 (PN107) Silicon NPN Phototransistors family.

Features

  • High sensitivity : ICE(L) = 5 mA (min. ) (at L = 100 lx) Narrow directional sensitivity for effective use of light input Fast response : tr = 5 µs (typ. ) Signal mixing capability using base pin (PNZ0108) TO-18 standard type package 0. 15 0 1. 12.7 min. 6.3 0.3 2- 0.45 0.05 2.54 0.25 2 0. 45 0 3 1. 2 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power.

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Datasheet Details

Part number PN108
Manufacturer Panasonic
File Size 317.11 KB
Description (PN107) Silicon NPN Phototransistors
Datasheet download datasheet PN108 Datasheet
Additional preview pages of the PN108 datasheet.
Other Datasheets by Panasonic Semiconductor

Full PDF Text Transcription

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Phototransistors PNZ107, PNZ108 (PN107, PN108) Silicon NPN Phototransistors PNZ107 4.6 0.15 Glass lens Unit : mm For optical control systems Features High sensitivity : ICE(L) = 5 mA (min.) (at L = 100 lx) Narrow directional sensitivity for effective use of light input Fast response : tr = 5 µs (typ.) Signal mixing capability using base pin (PNZ0108) TO-18 standard type package 0. 15 0 1. 12.7 min. 6.3 0.3 2- 0.45 0.05 2.54 0.25 2 0. 45 0 3 1. 2 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature * 5.75 max.
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