PNZ312D Dual Division Silicon PIN Photodiode

Panasonic Semiconductor

Description

PIN Photodiodes PNZ312D Dual Division Silicon PIN Photodiode For optical information systems .

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Datasheet Specifications

Part number: PNZ312D
Manufacturer: Panasonic Semiconductor
File Size: 49.47 KB
Datasheet: PNZ312D_PanasonicSemiconductor.pdf
Description: Dual Division Silicon PIN Photodiode

Features

* Fast response : tr, tf = 10 ns (typ. ) 13.5±1.0 4.0±0.1 1.0±0.3 1.0±0.1 ø3.2 Dep. 0.1(typ. ) 10˚ 5.0±0.1 2.54±0.1 4 3 1.8±0.3 1.0±0.2 Unit : mm Good photo current linearity Low dark current : ID = 20 nA (max. ) Small size plastic package (flat type) Adoption of visible light cutoff resin A B 4-0

Applications

* 1: Anode A 2: Common Cathode 3: Anode B 4: Common Cathode Note) The PNZ312D package consists of a visible light cutoff resin. Therefore the chips (A and B) shown in the drawing cannot actually be seen. Absolute Maximum Ratings (Ta = 25˚C) Parameter Reverse voltage (DC) Power dissipation Operating

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PNZ312D Dual Division Silicon PIN Photodiode Panasonic Semiconductor

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