UN412Y Datasheet - Panasonic Semiconductor

UN412Y Silicon PNP epitaxial planer transistor

*1 *0.3 *0.1 *0.03 *0.01 *1 Ta=75˚C 25˚C *25˚C 200 Collector current IC (mA) IB= *1.2mA *160 *1.0mA *0.8mA *0.6mA *80 *0.4mA *40 *0.2mA 0 0 *2 *4

Transistors with built-in Resistor UN4121/4122/4123/4124/412X/412Y Silicon PNP epitaxial planer transistor For digital circuits q q s Resistance by Part Number q q q q q q UN4121 UN4122 UN4123 UN4124 UN412X UN412Y (R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ 0.27kΩ 3.1kΩ (R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ 5.0kΩ 4.6kΩ 0.7±0.1 1 2 3 1.27 1.27 2.54±0.15 1 : Emitter 2 : Collector 3 : Base New S Type Package s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector cu.

UN412Y Features

* 4.0±0.2 Unit: mm C B R2 E 1 Transistors with built-in Resistor UN4121/4122/4123/4124/412X/412Y s Electrical Characteristics Parameter Collector cutoff current UN412X Collector cutoff current UN412X Emitter cutoff current UN4121 UN4122/412X/412Y UN4123/4124 (Ta=25˚C) Symbol ICBO ICBO ICEO I

UN412Y_PanasonicSemiconductor.pdf