* 0.5
* 0.05 +0.1 +0.1 1 Composite Transistors PT
* Ta 240 120 Ta=25˚C XN4509 IC
* VCE 60 VCE=10V 50 25˚C Ta=75˚C 40
* 25˚C IC
* VBE Total power dissipation PT (mW) 200 100 Collector current IC (mA) 160 80 IB=300µA 250µA 200µA 150µA 100µA Collector
XN04509
Panasonic Semiconductor
31.71 KB
Silicon npn transistor.
Composite Transistors XN4509 Silicon NPN epitaxial planer transistor Unit: mm For high-frequency amplification 0.65±0.15 6 0.95 2.8 0.3 +.
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