XN1112 Datasheet (Panasonic Semiconductor) - Silicon PNP epitaxial planer transistor

XN1112, Silicon PNP epitaxial planer transistor

Composite Transistors XN1112 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package.

(Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.

1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q UN1112 × 2 elements 0.8 s Basic Part Number of Element +0.2 s Absolu

XN1112 Features

* 1 Composite Transistors PT

* Ta 500 XN1112 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC

* VCE

* 160

* 140 Ta=25˚C IB=

* 1.0mA

* 0.9mA

* 0.8mA

* 0.7mA

* 0.6mA

* 0.5mA