XN421F Datasheet (Panasonic Semiconductor) - Silicon NPN epitaxial planer transistor

XN421F, Silicon NPN epitaxial planer transistor

Composite Transistors XN421F Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 0.65±0.15 2.8 0.3 +0.2 +0.25 1.5 0.05 6 0.65±0.15 1 0.3 0.05 0.5 0.05 0.95 2.9 0.05 q q Two elements incorporated into one package.

(Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.

1.9±0.1 +0.2 5 2 0.95 4 3 s Basic Part Number of Element q 1.1 0.1 0.4±0.2 s Absolu

XN421F Features

* +0.1 +0.1 1 Composite Transistors PT

* Ta 500 XN421F Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC

* VCE 240 100 VCE(sat)

* IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 160 hFE