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XN4501
Panasonic Semiconductor
33.42 KB
Silicon npn epitaxial planer transistor.
Composite Transistors
XN4501
Silicon NPN epitaxial planer transistor
Unit: mm
For general amplification
0.65±0.15
2.8
*0.3
+0.2 +0.25
1.5.
* +0.1 +0.1 1 Composite Transistors PT
* Ta 500 60 Ta=25˚C IB=160µA XN4501 IC
* VCE 1200 VCE=10V Ta=25˚C 1000 IB
* VBE Total power dissipation PT (mW) Collector current IC (mA) 400 50 40 120µA 100µA Base current IB (µA) 140µA 800 300 30 80µA 20 60µA 40µA 10 20µ
📁 Related Datasheet
XN4502 - Silicon NPN epitaxial planer transistor
(Panasonic Semiconductor)
Composite Transistors
XN4502
Silicon NPN epitaxial planer transistor
Unit: mm
For general amplification
0.65±0.15 6 0.95
2.8 –0.3
+0.2 +0.25
1.5 .
XN4503 - Silicon NPN epitaxial planer transistor
(Panasonic Semiconductor)
Composite Transistors
XN4503
Silicon NPN epitaxial planer transistor
Unit: mm
For amplification of low frequency output
0.65±0.15 6 0.95
2.8 –0.3
.
XN4504 - Silicon NPN epitaxial planer transistor
(Panasonic Semiconductor)
Composite Transistors
XN4504
Silicon NPN epitaxial planer transistor
Unit: mm
For amplification of low frequency output
0.65±0.15
2.8 –0.3
+0.2 +0.
XN4505 - NPN epitaxial planer transistor
(Panasonic Semiconductor)
.
XN4506 - NPN epitaxial planer transistor
(Panasonic Semiconductor)
Composite Transistors
XN4506
NPN epitaxial planer transistor
Unit: mm
For amplification of low frequency output
0.65±0.15 6 0.95
2.8 –0.3
+0.2 +0..
XN4509 - Silicon NPN epitaxial planer transistor
(Panasonic Semiconductor)
Composite Transistors
XN4509
Silicon NPN epitaxial planer transistor
Unit: mm
For high-frequency amplification
0.65±0.15 6
0.95
2.8 –0.3
+0.2 +0.2.
