XN4601 Datasheet (Panasonic Semiconductor) - Silicon NPN(PNP) epitaxial planer transistor

XN4601, Silicon NPN(PNP) epitaxial planer transistor

Composite Transistors XN4601 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For general amplification 0.65±0.15 2.8 0.3 +0.2 +0.25 1.5 0.05 6 0.65±0.15 1 0.3 0.05 0.5 0.05 0.95 +0.2 q q Two elements incorporated into one package.

Reduction of the mounting area and assembly cost by one half.

2.9 0.05 1.9±0.1 5 2 0.95 4 3 0.4±0.2 s Absolute Maximum Ratings Parameter Collector to

XN4601 Features

* +0.1 +0.1 1 Composite Transistors XN4601 (Ta=25˚C) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCB = 20V, IE = 0 VCE = 10V, IB = 0 VCE = 10V, IC = 2mA IC = 100mA, IB = 10mA VCB = 10V, IE =

* 2mA, f = 200MHz VCB = 10V