XN6435 Datasheet (Panasonic Semiconductor) - Silicon PNP epitaxial planer transistor

XN6435, Silicon PNP epitaxial planer transistor

Composite Transistors XN6435 Silicon PNP epitaxial planer transistor Unit: mm For high-frequency amplification 0.65±0.15 6 0.95 2.8 0.3 +0.2 +0.25 1.5 0.05 0.65±0.15 1 0.3 0.05 2.9 0.05 q q Two elements incorporated into one package.

Reduction of the mounting area and assembly cost by one half.

1.9±0.1 +0.2 5 2 0.95 4 3 q 2SA1022 × 2 elements 1.1 0.1 0.4±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Col

XN6435 Features

* 0.5

* 0.05 +0.1 +0.1 1 Composite Transistors PT

* Ta 500 XN6435 IC

* VCE

* 30

* 100 VCE(sat)

* IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 Total power dissipation PT (mW) Collector current IC (mA) 400

* 25 IB