XN6537 Datasheet (Panasonic Semiconductor) - Silicon NPN epitaxial planer transistor

XN6537, Silicon NPN epitaxial planer transistor

Composite Transistors XN6537 Silicon NPN epitaxial planer transistor Unit: mm For wide-band low-noise amplification 0.65±0.15 6 2.8 0.3 +0.2 +0.25 1.5 0.05 0.65±0.15 1 0.3 0.05 0.95 2.9 0.05 q q Two elements incorporated into one package.

Reduction of the mounting area and assembly cost by one half.

1.9±0.1 +0.2 5 2 0.95 4 3 q 2SC3110 × 2 elements 1.1 0.1 0.4±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Coll

XN6537 Features

* 0.5

* 0.05 +0.1 +0.1 1 Composite Transistors PT

* Ta 500 XN6537 IC

* VCE 30 Ta=25˚C 60 VCE=10V 50 25˚C IC

* VBE Total power dissipation PT (mW) Collector current IC (mA) Collector current IC (mA) 400 25 20 300 IB=300µA 250µA 200µA 40 Ta=75˚C