2B940A - Silicon PNP epitaxial planar type(For power amplification)

Panasonic

Key Features

1:Base 2:Collector 3:Emitter TO.
220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SB940 2SB940A (TC=25˚C) Symbol ICBO IEBO VCBO VCEO VEBO hFE1 hFE2 VBE VCE(sat) fT.
Conditions VCB =.
200V, IE = 0 VEB =.
4V, IC = 0 IC =.
50µA, IE = 0 IC =.
5mA, IB = 0 IE =.
500µA, IC = 0 VCE =.
10V, IC =.
150mA VCE =.

2B940A silicon pnp epitaxial planar type(for power amplification) by Panasonic - Datasheet Preview

Datasheet Details

Part number	2B940A
Manufacturer	Panasonic
File Size	46.40 KB
Description	Silicon PNP epitaxial planar type(For power amplification)
Datasheet	2B940A Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer

Other Datasheets by Panasonic

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Power Transistors 2SB940, 2B940A Silicon PNP epitaxial planar type For power amplification For TV vertical deflection output Complementary to 2SD1264 and 2SD1264A Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 q q 16.7±0.3 14.0±0.