1. Wide variation of 40V, 60V, 100V, 200V, 250V, 400V, 600V, 1,000V and 1,500V load voltage 2. Low on-resistance of typ. 0.6Ω (AQV251) 3. Reinforced insulation type of 5,
AQV253H - PhotoMOS
(Panasonic)
Standard type:
VDE (AQV258) Reinforced type:
VDE
(AQV253H, AQV254H) (AQV256H)
DIP6-pin type with low on-resistance and reinforced insulation
HE 1 .
AQV253 - PhotoMOS
(Panasonic)
Standard type:
VDE (AQV258) Reinforced type:
VDE
(AQV253H, AQV254H) (AQV256H)
DIP6-pin type with low on-resistance and reinforced insulation
HE 1 .
AQV253A - PhotoMOS
(Panasonic)
Standard type:
VDE (AQV258) Reinforced type:
VDE
(AQV253H, AQV254H) (AQV256H)
DIP6-pin type with low on-resistance and reinforced insulation
HE 1 .
AQV251 - PhotoMOS
(Panasonic)
Standard type:
VDE (AQV258) Reinforced type:
VDE
(AQV253H, AQV254H) (AQV256H)
DIP6-pin type with low on-resistance and reinforced insulation
HE 1 .
AQV251A - PhotoMOS
(Panasonic)
Standard type:
VDE (AQV258) Reinforced type:
VDE
(AQV253H, AQV254H) (AQV256H)
DIP6-pin type with low on-resistance and reinforced insulation
HE 1 .
AQV251G - PhotoMOS RELAY
(Panasonic)
Capable of 2A to 3A high-frequency load
switching
HE 1 Form A
High Capacity (AQV251G, AQV252G)
8.8 .346
6.4 .252
3.9 .154
8.8 .346
6.4 .252
3.6 ..
AQV252 - PhotoMOS
(Panasonic)
Standard type:
VDE (AQV258) Reinforced type:
VDE
(AQV253H, AQV254H) (AQV256H)
DIP6-pin type with low on-resistance and reinforced insulation
HE 1 .
AQV252A - PhotoMOS
(Panasonic)
Standard type:
VDE (AQV258) Reinforced type:
VDE
(AQV253H, AQV254H) (AQV256H)
DIP6-pin type with low on-resistance and reinforced insulation
HE 1 .
AQV252G - PhotoMOS RELAY
(Panasonic)
Capable of 2A to 3A high-frequency load
switching
HE 1 Form A
High Capacity (AQV251G, AQV252G)
8.8 .346
6.4 .252
3.9 .154
8.8 .346
6.4 .252
3.6 ..
AQV252G2S - PhotoMOS RELAY
(Panasonic)
Miniature SOP6-pin type with high capacity of 3A load current
HE SOP 1 Form A
High Capacity (AQV25❍G❍S)
6.3 .248
4.4 .173
2.1 .083
mm inch
16 25 .
