AQV258H5AX
Panasonic
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Photomos.
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AQV258H5A - PhotoMOS
(Panasonic)
PhotoMOS
HE 1 Form A
Ideal for industrial battery monitoring system (BMS)
8.8 6.4 8.8 6.4 3.9 3.6 (Height includes standoff)
+ 16 234
FEATURES Load .
AQV258H5AZ - PhotoMOS
(Panasonic)
PhotoMOS
HE 1 Form A
Ideal for industrial battery monitoring system (BMS)
8.8 6.4 8.8 6.4 3.9 3.6 (Height includes standoff)
+ 16 234
FEATURES Load .
AQV258H5 - PhotoMOS
(Panasonic)
PhotoMOS
HE 1 Form A
Ideal for industrial battery monitoring system (BMS)
8.8 6.4 8.8 6.4 3.9 3.6 (Height includes standoff)
+ 16 234
FEATURES Load .
AQV258 - PhotoMOS
(Panasonic)
Standard type:
VDE (AQV258) Reinforced type:
VDE
(AQV253H, AQV254H) (AQV256H)
DIP6-pin type with low on-resistance and reinforced insulation
HE 1 .
AQV258A - PhotoMOS
(Panasonic)
Standard type:
VDE (AQV258) Reinforced type:
VDE
(AQV253H, AQV254H) (AQV256H)
DIP6-pin type with low on-resistance and reinforced insulation
HE 1 .
AQV251 - PhotoMOS
(Panasonic)
Standard type:
VDE (AQV258) Reinforced type:
VDE
(AQV253H, AQV254H) (AQV256H)
DIP6-pin type with low on-resistance and reinforced insulation
HE 1 .
AQV251A - PhotoMOS
(Panasonic)
Standard type:
VDE (AQV258) Reinforced type:
VDE
(AQV253H, AQV254H) (AQV256H)
DIP6-pin type with low on-resistance and reinforced insulation
HE 1 .
AQV251G - PhotoMOS RELAY
(Panasonic)
Capable of 2A to 3A high-frequency load
switching
HE 1 Form A
High Capacity (AQV251G, AQV252G)
8.8 .346
6.4 .252
3.9 .154
8.8 .346
6.4 .252
3.6 ..
AQV252 - PhotoMOS
(Panasonic)
Standard type:
VDE (AQV258) Reinforced type:
VDE
(AQV253H, AQV254H) (AQV256H)
DIP6-pin type with low on-resistance and reinforced insulation
HE 1 .
AQV252A - PhotoMOS
(Panasonic)
Standard type:
VDE (AQV258) Reinforced type:
VDE
(AQV253H, AQV254H) (AQV256H)
DIP6-pin type with low on-resistance and reinforced insulation
HE 1 .