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AQW614EH - PhotoMOS RELAYS

This page provides the datasheet information for the AQW614EH, a member of the AQW612EH PhotoMOS RELAYS family.

Features

  • 1. 60V type couples high capacity (0.5A) with low on-resistance (typ. 1Ω). 2. Reinforced insulation 5,000 V More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation). 3. Aprrox. 1/2 the space compared with the mounting area of a set of 1 Form A and 1 Form B PhotoMOS 4. Applicable for 1 Form A and 1 Form B use as well as two independent 1 Form A and 1 Form B use 5. Controls low-level analog signals PhotoMOS feature extremely low.

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Datasheet preview – AQW614EH

Datasheet Details

Part number AQW614EH
Manufacturer Panasonic
File Size 109.39 KB
Description PhotoMOS RELAYS
Datasheet download datasheet AQW614EH Datasheet
Additional preview pages of the AQW614EH datasheet.
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Full PDF Text Transcription

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Both NO and NC contacts incorporated in a compact DIP8-pin Reinforced insulation VDE (AQW610EH, 614EH) (AQW612EH) GE 1 Form A & 1 Form B (AQW61❍EH) 9.78 .385 6.4 .252 3.9 .154 9.78 .385 6.4 .252 3.6 .142 mm inch 18 N.C. 27 36 45 N.O. RoHS compliant FEATURES 1. 60V type couples high capacity (0.5A) with low on-resistance (typ. 1Ω). 2. Reinforced insulation 5,000 V More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation). 3. Aprrox. 1/2 the space compared with the mounting area of a set of 1 Form A and 1 Form B PhotoMOS 4. Applicable for 1 Form A and 1 Form B use as well as two independent 1 Form A and 1 Form B use 5.
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