FC694301 - Silicon N-channel MOS FET

Panasonic

Datasheet Details

s.
High-speed switching.
Low drain-source ON resistance: RDS(on) typ. = 3 W (VGS = 2.5 V).
Small size surface mounting package: SSMini6-F3-B.
Eco-friendly Halogen-free package.
Packaging Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard).
Absolute Maximum Ratings Ta = 25°C Parameter Symbol Drain-source surrender voltage VDSS FET1 Gate-source surrender voltage FET2 Drain current VGSS ID Peak drain current IDP Total power.

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Published: Sep 22, 2017 |