* Low drain-source ON resistance: RDS(on) typ. = 2 W (VGS = 4.0 V) / 4 W (VGS =
* 4.0 V)
* High-speed switching
* Small size surface mounting package: SSMini6-F3-B
* Contributes to miniaturization of sets, reduction of component count.
* Eco-friendly Ha
FG694301 Datasheet (620.43 KB)
FG694301
Panasonic
620.43 KB
Silicon n-/p-channel mosfet.
This product complies with the RoHS Directive (EU 2002/95/EC). FG694301 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switchi.
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