MA3X786E Datasheet (Panasonic) - Silicon epitaxial planar type

MA3X786E, Silicon epitaxial planar type

Schottky Barrier Diodes (SBD) MA3X786E Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification Two MA3X786s are contained in one package (cathode common) Allowing to rectify under (IF(AV) = 100 mA) condition Optimum for high-frequency rectification because of its short reverse recovery time (trr) Low VF (forward rise voltage), with high rectification efficiency 2.9 0.05 2.8 0.65 ± 0.15 +

MA3X786E Features

* 1 3 2 + 0.2 0.95 1.45 0 to 0.1 1.1

* 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Single Double

* 2 Single Double

* 2 IFSM Tj Tstg IF(AV) Symbol VR VRRM IFM Rating 30 30 300 200 1