* IF(AV) = 200 mA, and VR > 50 V is achieved
* Allowing automatic insertion with the emboss taping
* Optimum for high-frequency rectification because of its short reverse recovery time (trr)
* High rectification efficiency caused by its low forward-risevoltage (VF) 2
MA4X746
Panasonic
46.82 KB
Silicon epitaxial planar type.
Schottky Barrier Diodes (SBD)
MA4X746
Silicon epitaxial planar type
Unit : mm
For super-high speed switching circuit For small current rectification.
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