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VTP1188S

VTP Process Photodiodes

VTP1188S General Description

Large area planar silicon photodiode mounted on a two lead ceramic substrate. A clear molded lens is used to increase sensitivity. Low junction capacitance permits fast response time. Storage Temperature: Operating Temperature: -20°C to 75°C -20°C to 75°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See.

VTP1188S Datasheet (25.95 KB)

Preview of VTP1188S PDF

Datasheet Details

Part number:

VTP1188S

Manufacturer:

PerkinElmer Optoelectronics

File Size:

25.95 KB

Description:

Vtp process photodiodes.
VTP Process Photodiodes VTP1188S PACKAGE DIMENSIONS inch (mm) CASE 12 LENSED CERAMIC CHIP ACTIVE AREA: .017 in2 (1.1 mm2) ABSOLUTE MAXIMUM RATINGS.

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VTP1188S VTP Process Photodiodes PerkinElmer Optoelectronics

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