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VTP8350

VTP Process Photodiodes

VTP8350 General Description

Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes exhibit low dark current under reverse bias and fast speed of response. ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -20°C to 75°C -20°C to 75°C ELEC.

VTP8350 Datasheet (26.49 KB)

Preview of VTP8350 PDF

Datasheet Details

Part number:

VTP8350

Manufacturer:

PerkinElmer Optoelectronics

File Size:

26.49 KB

Description:

Vtp process photodiodes.

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VTP8350 VTP Process Photodiodes PerkinElmer Optoelectronics

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