VTT3423LA Datasheet | PerkinElmer Optoelectronics

DESCRIPTION A small area high speed NPN silicon phototransistor in a 3 mm diameter, lensed plastic package. The package material transmits infrared and blocks visible light. These devices are spectrally and mechanically matched to the VTE33xx LA series of IREDs. ABSOLUTE MAXIMUM RATINGS (@ 25°C unless otherwise noted) Maximum Temperatures Storage Temperature: Operating Temperature: Continuous Power Dissipation: Derate above 30°C: Maximum Current: Lead Soldering Temperature: (1.6 mm from case, 5 sec. max.) -40°C to 100°C -40°C to 100°C 50 m W 0.71 m W/°C 25 m A 260°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages 91-92) Light Current l C m A Min. VTT3423LA VTT3424LA VTT3425LA 1.0 2.0 3.0 Max. - - - H fc (m W/cm2) VCE = 5.0 V 20 (1) 20 (1) 20 (1) Dark Current l CEO H=0 (n A) Max. 100 100 100 VCE (Volts) 10 10 10 Collector Breakdown VBR(CEO) l C = 100 µA H=0 Volts, Min. 30 30 30 Emitter Breakdown VBR(ECO) l E = 100 µA H=0 Volts, Min. 5.0 5.0 5.0 Saturation Voltage VCE(SAT) l C = 1.0 m A H = 400 fc Volts, Max. 0.25 0.25 0.25 Rise/Fall Time t R/t F l C = 1.0 m A RL = 100 Ω µsec, Typ. 3.0 4.0 5.0 Angular Response θ1/2 Part Number Typ. ±10° ±10° ±10° Refer to General Product Notes, page 2. Perkin Elmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: .perkinelmer./opto...