BC107 Datasheet | Philips Semiconductors

FEATURES - Low current (max. 100 m A) - Low voltage (max. 45 V). APPLICATIONS - General purpose switching and amplification. DESCRIPTION NPN transistor in a TO-18; SOT18 metal package. PNP plement: BC177. BC107; BC108; BC109 PINNING PIN 1 2 3 emitter base collector, connected to the case DESCRIPTION handbook, halfpage 1 3 2 MAM264 Fig.1 Simplified outline (TO-18; SOT18) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BC107 BC108; BC109 VCEO collector-emitter voltage BC107 BC108; BC109 ICM Ptot h FE peak collector current total power dissipation DC current gain BC107 BC108 BC109 f T transition frequency IC = 10 m A; VCE = 5 V; f = 100 MHz Tamb ≤ 25 °C IC = 2 m A; VCE = 5 V 110 110 200 100 450 800 800 - MHz open base - - - - 45 20 200 300 V V m A m W open emitter - - 50 30 V V CONDITIONS MIN. MAX. UNIT 1997 Sep 03 Philips Semiconductors Product specification NPN general purpose transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC107 BC108; BC109 VCEO collector-emitter voltage BC107 BC108; BC109 VEBO emitter-base voltage BC107 BC108; BC109 IC ICM IBM Ptot Tstg Tj Tamb collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C open collector open base PARAMETER collector-base voltage CONDITIONS open emitter BC107; BC108; BC109 MIN. - - - - - - - - - - - 65 - - 65 MAX. 50 30 45 20 6 5 100 200 200 300 +150 175 +150 V V V V V V UNIT m A m A m A m W °C °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to ambient thermal resistance from junction to case CONDITIONS note 1 VALUE 0.5 0.2 UNIT K/m W K/m W 1997 Sep 03 Philips...