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PMEG3002AEB - Low VF MEGA Schottky barrier diode

PMEG3002AEB Description

DISCRETE SEMICONDUCTORS DATA SHEET M3D319 PMEG3002AEB Low VF MEGA Schottky barrier diode Product speciļ¬cation 2002 May 06 Philips Semiconductors .
Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOD.

PMEG3002AEB Features

* Forward current: 0.2 A
* Reverse voltage: 30 V
* Very low forward voltage

PMEG3002AEB Applications

* Ultra high-speed switching
* High efficiency DC/DC conversion
* Voltage clamping
* Inverse-polarity protection
* Low voltage rectification

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Low MEGA Schottky barrier diode Philips
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