BAX12
Philipss
39.41kb
Controlled avalanche diode. The BAX12 is a controlled avalanche diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass S
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📁 Related Datasheet
BAX12 - CONTROLLED AVALANCHE DIODES
(EIC)
.eicsemi.
BAX12, BAX12A
CONTROLLED AVALANCHE DIODES
FEATURES :
* Switching speed: max. 50 ns * Continuous reverse voltage: max. 90V * Repetit.
BAX12A - CONTROLLED AVALANCHE DIODES
(EIC)
.eicsemi.
BAX12, BAX12A
CONTROLLED AVALANCHE DIODES
FEATURES :
* Switching speed: max. 50 ns * Continuous reverse voltage: max. 90V * Repetit.
BAX13 - High Speed Switching Diode
(Fairchild)
.
BAX14 - General purpose diode
(Philipss)
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BAX14 General purpose diode
Product specification Supersedes data of April 1996 1996 Sep 17
Philips Semic.
BAX16 - General Purpose Industrial Diode
(Fairchild)
.
BAX18 - General purpose diode
(Philipss)
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BAX18 General purpose diode
Product specification Supersedes data of April 1996 1996 Sep 18
Philips Semic.
BAX18 - SWITCHING DIODE
(EIC)
.eicsemi.
BAX18
FEATURES :
• Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 75 V • Repetitive peak reverse.
BAX280 - FRED Diode (VRRM 1000 V IFRMS 5.5 A 55 ns Soft recovery characteristics)
(Siemens Group)
FRED Diode
BAX 280
Preliminary Data
q VRRM 1000 V q IFRMS 5.5 A q trr 55 ns q Soft recovery characteristics
Type
Ordering Code
Tape and Reel Info.
BAX45 - Ultra Fast Diode
(SGS-ATES)
.
BAX46 - Ultra Fast Diode
(SGS-ATES)
.