LBE2003S

NPN microwave power transistors

Philipss

LBE2003S Features

* Diffused emitter ballasting resistors

* Self-aligned process entirely ion implanted and gold metallization

* Optimum temperature profile

* Excellent performance and reliability. APPLICATIONS

* Common emitter class-A linear power amplifiers up to 4 GHz. PIN 1

LBE2003S General Description

LBE2003S; LBE2009S; LCE2009S The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal ceramic studless package.The LCE2009S is a maintenance type in a SOT442A metal ceramic capstan package. PINNING DESCRIPTION collector emitter base emitter handboo.

LBE2003S Datasheet (126.01 KB)

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LBE2003S

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Philipss

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126.01 KB

Description:

Npn microwave power transistors.
DISCRETE SEMICONDUCTORS DATA SHEET LBE2003S; LBE2009S; LCE2009S NPN microwave power transistors Product speciﬁcation Supersedes data of November 199.

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LBE2003S NPN microwave power transistors Philipss

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LBE2003S Features

LBE2003S General Description

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