LCE2009S Datasheet, transistors, Philipss

LCE2009S Features

• Transistors
• Diffused emitter ballasting resistors
• Self-aligned process entirely ion implanted and gold metallization
• Optimum temperature profile
• Excellent pe

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Part number:

LCE2009S

Manufacturer:

Philipss

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126.01kb

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📄 Datasheet

Description:

Npn microwave power transistors. LBE2003S; LBE2009S; LCE2009S The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A me

LCE2009S Application

• Applications
• Common emitter class-A linear power amplifiers up to 4 GHz. PIN 1 2 3 4 DESCRIPTION LBE2003S; LBE2009S; LCE2009S The LBE200

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LCE2009S

Philipss

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