LCE2009S NPN microwave power transistors

Philipss

Description

DISCRETE SEMICONDUCTORS DATA SHEET LBE2003S; LBE2009S; LCE2009S NPN microwave power transistors Product speciﬁcation Supersedes data of November 199.
LBE2003S; LBE2009S; LCE2009S The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal ceramic studl.

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Datasheet Specifications

Part number: LCE2009S
Manufacturer: Philipss
File Size: 126.01 KB
Datasheet: LCE2009S_PhilipsSemiconductors.pdf
Description: NPN microwave power transistors

Features

* Diffused emitter ballasting resistors
* Self-aligned process entirely ion implanted and gold metallization
* Optimum temperature profile

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