PJM03N10SQ
Features
- VDS = 100V, ID = 3A
- RDS(ON) ＜ 140 mΩ (@VGS=10V)
- MSL: 1 Level
Applications
- Load Switch
- PWM Applications
Absolute Maximum Ratings
Ratings at TA =25℃ unless otherwise specified.
Parameter Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current 1 Power Dissipation 1 Junction and Storage Temperature Range Maximum Junction-to-Ambient
Symbol VDSS VGSS
ID IDM PD TJ, TSTG RθJA
PJM03N10SQ N-Channel MOSFET
SOT-89
Mark: 0103M
Schematic Diagram
Drain
Gate
Source
Value 100 ±20
3 20 0.5 150, -55 to 150 250
Units V V
A A W °C °C/W
.pingjingsemi. Revision：1.0 Jun-2018
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Electrical Characteristics (TA = 25℃)
Parameter
Symbol
Static Parameters
Conditions
Drain-Source Breakdown Voltage
BVDSS ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
Gate-Body...
