PJM10H05NST
Description
：
The PJM10H05NST uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. The package form is SOT-223, which accords with the Ro HS standard.
Features
：
- RDS(ON) <300mΩ @ VGS=10V（Typ：200mΩ）
- VDS=100V, ID=5A
- Fully characterized avalanche voltage and current
- Excellent package for good heat dissipation
PJM10H05NST N-MOS
VDSS ID PD
RDS(ON)type
100 V 5A 3W
200 mΩ
SOT-223
Applications：
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
Absolute Rating（Tc= 25℃ unless otherwise specified）：
Symbol
Parameter
VDSS ID IDM VGS PD EAS
TJ， Tstg
Drain-to-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-to-Source Voltage Power Dissipation Single pulse avalanche energy5 Operating Junction and Storage Temperature Range
Rating
100 5 20
±20 3 20
175，
- 55 to...
