PJM10H10NTE
Features
- Excellent package for good heat dissipation
- High density cell design for ultra low RDS(on)
- VDS= 100V,ID= 10A
RDS(on)< 120mΩ @VGS= 10V
TO-252
Applications
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
1. Gate 2.Drain 3.Sourse Schematic Diagram
2.Drain
1.Gate
3.Source
+ YW
10H10: Product code
Marking code
+ YW
Y: Year code
2022 2023 2024 2025 2026 2027 2028 2029 2030 2031
Weeks
1~26
27~52
W: Week code code
A~Z a~z z
Absolute Maximum Ratings
Ratings at 25℃ case temperature unless otherwise specified.
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed Note1 Single pulse avalanche energy Note2 Maximum Power Dissipation Junction Temperature Storage Temperature...
