PJM2300NSA
Features
- Trench FET Power MOSFET
- Excellent RDS(on) and Low Gate Charge
- MSL: 1 Level
Applications
- Load Switch for Portable Devices
- DC/DC Converter
Absolute Maximum Ratings
Ratings at TA =25℃ unless otherwise specified.
Parameter Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Symbol VDS VGS
Pulsed Drain Current (Note1) Power Dissipation Junction and Storage Temperature Range Thermal Characteristics
IDM PD TJ, TSTG
Parameter Maximum Junction-to-Ambient (Note2)
Symbol RθJA
Note: 1.Repetitive rating : Pulse width limited by junction temperature. 2.Surface mounted on FR4 board, t≤10s.
PJM2300NSA N-Channel MOSFET
SOT-23
1.Gate 2.Source 3.Drain
Schematic diagram
Drain 3
1 Gate
2 Source
Marking: M02
Maximum 20 ±20 6.0 18 0.9
150, -55 to 150
Typ. 139
Units V V
W °C
Units °C/W
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PJM2300NSA N-Channel MOSFET
Electrical Characteristics (TC = 25℃)
Parameter
Symbol...
